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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJW16212/D
MJF18002 (See MJE18002) MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008)
SCANSWITCHTM NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors
The MJW16212 is a state-of-the-art SWITCHMODETM bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page, monochrome monitors. 1500 Volt Collector-Emitter Breakdown Capability Typical Dynamic Desaturation Specified (New Turn-Off Characteristic) Application Specific State-of-the-Art Die Design Fast Switching: 200 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ) * Low Saturation Voltage: 0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive * Low Collector-Emitter Leakage Current -- 250 A Max at 1500 Volts -- VCES * High Emitter-Base Breakdown Capability For High Voltage Off Drive Circuits -- 8.0 Volts (Min) MAXIMUM RATINGS * * * *
MJW16212*
*Motorola Preferred Device
POWER TRANSISTOR 10 AMPERES 1500 VOLTS - VCES 50 AND 150 WATTS
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Rating Symbol VCES Value 1500 650 8.0 -- -- Unit Vdc Vdc Vdc V Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage VCEO(sus) VEBO RMS Isolation Voltage (2) (for 1 sec, TA = 25_C, Rel. Humidity < 30%) VISOL Per Fig. 14 Per Fig. 15 Collector Current -- Continuous Collector Current -- Pulsed (1) Base Current -- Continuous Base Current -- Pulsed (1) IC ICM IB IBM 10 15 Adc Adc mJ 5.0 10 0.2 Maximum Repetitive Emitter-Base Avalanche Energy W (BER) PD Total Power Dissipation @ TC = 25_C Total Power Dissipation @ TC = 100_C Derated above TC = 25_C 150 39 1.49 Watts W/_C Operating and Storage Temperature Range TJ, Tstg - 55 to 125
CASE 340F-03 TO-247AE
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC TL
Max
Unit
Thermal Resistance -- Junction to Case
0.67 275
_C/W _C
Lead Temperature for Soldering Purposes 1/8 from the case for 5 seconds
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided.
v
Preferred devices are Motorola recommended choices for future use and best overall value.
SCANSWITCH and SWITCHMODE are trademarks of Motorola Inc.
REV 1
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
3-1
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III I I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJW16212
(2) Pulse Test: Pulse Width = 300 s, Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (2) OFF CHARACTERISTICS (2)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
3-2
Collector-Emitter Saturation Voltage (IC = 5.5 Adc, IB = 2.2 Adc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 400 mAdc) Inductive Load (IC = 5.5 A, IB = 2.2 A), High Resolution Deflection Simulator Circuit Table 2 Storage Fall Time Collector-Heatsink Capacitance -- MJF16212 Isolated Package (Mounted on a 1 x 2 x 1/16 Copper Heatsink, VCE = 0, ftest = 100 kHz) Emitter-Base Turn-Off Energy (EB(avalanche) = 500 ns, RBE = 22 ) Gain Bandwidth Product (VCE = 10 Vdc, IC = 0.5 A, ftest = 1.0 MHz) Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 100 kHz) Dynamic Desaturation Interval (IC = 5.5 A, IB1 = 2.2 A, LB = 1.5 H) DC Current Gain (IC = 1.0 A, VCE = 5.0 Vdc) DC Current Gain (IC = 10 A, VCE = 5.0 Vdc) Base-Emitter Saturation Voltage (IC = 5.5 Adc, IB = 2.2 Adc) Collector-Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mA, IC = 0) Emitter-Base Leakage (VEB = 8.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 1500 V, VBE = 0 V) Collector Cutoff Current (VCE = 1200 V, VBE = 0 V) 0.02 0.01 IC, COLLECTOR-EMITTER CURRENT (A) 0.2 0.1 0.05 100 50 20 IC, COLLECTOR CURRENT (A) 2 1 0.5 10 5 1 TJ = 25C 2 3
Figure 1. Maximum Forward Bias Safe Operating Area
5 7 10 20 30 50 70 100 200 300 500 700 1K VCE, COLLECTOR-EMITTER VOLTAGE (V)
BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN
MJH16212
Characteristic
DC
v 2.0%.
5 ms
SAFE OPERATING AREA
10 s
100 ns
II
18
14
10
2
6
VCEO(sus)
0
V(BR)EBO
VCE(sat)
VBE(sat)
Symbol
Motorola Bipolar Power Transistor Device Data
EB(off) Cc-hs IEBO ICES Cob hFE tds tsv tfi fT 300
Figure 2. Maximum Reverse Bias Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (V) Min 650 8.0 -- 4.0 600 -- -- -- -- -- -- -- -- -- -- -- -- -- 900 2000 200 2.75 0.15 0.14 Typ 180 350 5.0 0.9 24 6.0 35 11 -- -- -- -- 1200 4000 350 Max 350 250 25 1.5 1.0 1.0 25 -- 10 -- -- -- -- -- -- IC/IB = 5 TJ 100C 1500 Adc Adc MHz Unit Vdc Vdc Vdc Vdc pF pF J ns ns --
MJW16212
SAFE OPERATING AREA (continued)
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 1 may be found at any case temperature by using the appropriate curve on Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage- current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 2 gives the RBSOA characteristics.
1 0.8 SECOND BREAKDOWN DERATING
POWER DERATING FACTOR
0.6 THERMAL DERATING
0.4
0.2
0
25
45
65
85
105
125
TC, CASE TEMPERATURE (C)
Figure 3. Power Derating
Table 1. RBSOA/V(BR)CEO(SUS) Test Circuit
0.02 F H.P. 214 OR EQUIV. P.G. + 0 - 35 V 0.02 F 50 500 100 T1 0V -V (ICpk [ LcoilCC ) V A 50 *IB Vclamp VCC IB V(BR)CEO L = 10 mH RB2 = VCC = 20 Volts *Tektronix *P-6042 or *Equivalent RBSOA L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 IB2 IB1 T.U.T. MR856 +V IC *IC L T1 VCE VCE(pk) -V IC(pk) +- 1 F RB2 2N5337 - 100 + V 11 V
2N6191 20 10 F RB1 A
T1 adjusted to obtain IC(pk)
Note: Adjust - V to obtain desired VBE(off) at Point A.
Motorola Bipolar Power Transistor Device Data
3-3
MJW16212
VCE , COLLECTOR-EMITTER VOLTAGE (V) VBE, BASE-EMITTER VOLTAGE (V) 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 .01 .02 .03 .05 0.1 0.2 0.3 0.5 1 2 3 5 7 10 IC = 2 4 5.5 8 10 A 10 7 5 3 2 = 25C 1 0.7 0.5 0.3 0.2 0.1 0.1 IC/IB = 5 TJ = 100C
TJ = 25C
IC/IB = 10 TJ = 100C = 25C 0.2 0.3 0.5 0.7 1 2 3 5 7 10
IB, BASE CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 4. Typical Collector-Emitter Saturation Region
Figure 5. Typical Emitter-Base Saturation Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (V)
3 2 1 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 = 25C
IC/IB = 10 TJ = 100C = 25C
f , TRANSITION FREQUENCY
10 7 5
5
4
3
VCE = 10 V f(test) = 1 MHz TC = 25C
IC/IB = 5 TJ = 100C
2
1
0 0.5 0.7 1 2 3 5 7 10 0 1 2 3 4 5 6 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 6. Typical Collector-Emitter Saturation Voltage
Figure 7. Typical Transition Frequency
10000 5000 2000 1000 500 200 100 50 20 10 5 2 1 1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000 VR, REVERSE VOLTAGE (V) ftest = 1 MHz Cob Cib
C, CAPACITANCE (pF)
Figure 8. Typical Capacitance
3-4
Motorola Bipolar Power Transistor Device Data
MJW16212
DYNAMIC DESATURATIION
The SCANSWITCH series of bipolar power transistors are specifically designed to meet the unique requirements of horizontal deflection circuits in computer monitor applications. Historically, deflection transistor design was focused on minimizing collector current fall time. While fall time is a valid figure of merit, a more important indicator of circuit performance as scan rates are increased is a new characteristic, "dynamic desaturation." In order to assure a linear collector current ramp, the output transistor must remain in hard saturation during storage time and exhibit a rapid turn-off transition. A sluggish transition results in serious consequences. As the saturation voltage of the output transistor increases,
+ 24 V
the voltage across the yoke drops. Roll off in the collector current ramp results in improper beam deflection and distortion of the image at the right edge of the screen. Design changes have been made in the structure of the SCANSWITCH series of devices which minimize the dynamic desaturation interval. Dynamic desaturation has been defined in terms of the time required for the VCE to rise from 1.0 to 5.0 volts (Figures 9 and 10) and typical performance at optimized drive conditions has been specified. Optimization of device structure results in a linear collector current ramp, excellent turn-off switching performance, and significantly lower overall power dissipation.
Table 2. High Resolution Deflection Application Simulator
U2 MC7812 VI G VO N D C2 10 F
C1 100 F
+
+
Q2 MJ11016 (IB) R1 1k 6.2 V
R5 1k
(IC)
Q5 MJ11016
R7 2.7 k
R8 9.1 k
R9 470
+ R10 47
C3 10 F
C6 100 F
+ LY
C4 0.005 R2 R510 SYNC Q1 R3 250 (DC) 8
C5 0.1 6 VCC OUT GND 2 1
100 V R11 470 1W Q3 MJE 15031 T1 R12 470 1W LB D2 MUR460 CY
7 OSC
%
R6 1k
U1 MC1391P D1 MUR110
VCE Q4 DUT R4 22
BS170 T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec. Turns Ratio = 18:6 Gapped for LP = 30 H
LB = 1.5 H CY = 0.01 F LY = 13 H 5 DYNAMIC DESATURATION TIME IS MEASURED FROM VCE = 1 V TO VCE = 5 V
IB1 = 1.3 A IB, BASE CURRENT (A)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
4
3 2
IB2 = 4.9 A
1 0 0 2 4 TIME (ns) 6 8
tds 10
TIME (2 s/DIV)
Figure 9. Deflection Simulator Circuit Base Drive Waveform
Figure 10. Definition of Dynamic Desaturation Measurement
Motorola Bipolar Power Transistor Device Data
3-5
MJW16212
ts , RESISTIVE STORAGE TIME ( s) 15 tf , RESISTIVE FALL TIME ( s) 10 7 5 IB2 = IB1 3 2 f = 5 TJ = 25C 1 2 IB2 = 2 (IB1) 1500 1000 700 500 300 200 f = 5 TJ = 25C 1 2 3 5 7 10 IC, COLLECTOR CURRENT (A) 15 IB2 = 2 (IB1) IB2 = IB1
1 3 5 7 10 IC, COLLECTOR CURRENT (A) 15
100
Figure 11. Typical Resistive Storage Time
Figure 12. Typical Resistive Fall Time
Table 3. Resistive Load Switching
+15
ts and tf
1 F
150
100
100 F MTP8P10 MTP8P10 RB1 A
V(off) adjusted to give specified off drive
MPF930 +10 V MPF930 50 MUR105
RB2 MTP12N10
VCC RL IC IB1 IB2 RB1 RB2
250 V 28 5.5 A 1.1 A Per Spec 3.3 Per Spec Voff A *IB T.U.T. 500 F 150 MJE210 1 F
*IC VCC
RL
1 0.5 D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.2 0.1 0.05
0.2 0.1 RJC(t) = r(t) RJC RJC = 0.7C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk)
t1
SINGLE PULSE 0.01 0.1
t2
DUTY CYCLE, D = t1/t2 1000 10000
1
10 t, TIME (ms)
100
Figure 13. Thermal Response
3-6
Motorola Bipolar Power Transistor Device Data
MJW16212
EMITTER-BASE TURN-OFF ENERGY, EB(off) Emitter-base turn-off energy is a new specification included on the SCANSWITCH data sheets. Typical techniques for driving horizontal outputs rely on a pulse transformer to supply forward base current, and a turnoff network that includes a series base inductor to limit the rate of transition from forward to reverse. An alternate drive scheme has been used to characterize the SCANSWITCH series of devices (see Figure 2). This circuit ramps the base drive to eliminate the heavy overdrive at the beginning of the collector current ramp and underdrive just prior to turn-off observed in typical drive topologies. This high performance drive has two additional important advantages. First, the configuration of T1 allows Lb to be placed outside the path of forward base current making it unnecessary to expend energy to reverse the current flow as in a series based inductor. Second, there is no base resistor to limit forward base current and hence no power loss associated with setting the value of the forward base current. The ramp generating process stores rather than dissipates energy. Tailoring the amount of energy stored in T1 to the amount of energy, EB (off), that is required to turn the output transistor off results in essentially lossless operation. [Note: B+ and the primary inductance of T1 (LP) are chosen such that 1/2LPlb2 = EB(off).]
TEST CONDITIONS FOR ISOLATION TESTS* (MJF16212 ONLY)
MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE
0.099" MIN LEADS
HEATSINK 0.110" MIN
HEATSINK
Figure 14. Screw or Clip Mounting Position for Isolation Test Number 1
Figure 15. Screw or Clip Mounting Position for Isolation Test Number 2
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION** (MJF16212 ONLY)
4-40 SCREW PLAIN WASHER CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 16a. Screw-Mounted
Figure 16b. Clip-Mounted
Figure 16. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
Motorola Bipolar Power Transistor Device Data
3-7
MJW16212
PACKAGE DIMENSIONS
0.25 (0.010)
M
-Q- TBM
-T- E -B- U C
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134
L
A
R
1 2 3
K
P
-Y-
F D 0.25 (0.010)
M
V G
H J
YQ
S
STYLE 3: PIN 1. 2. 3. 4.
CASE 340F-03 TO-247AE ISSUE E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
3-8
Motorola Bipolar Power Transistor Device Data
*MJW16212/D*
MJW16212/D

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